The Microcircuit,memory, cataloged under National Stock Number 5962-01-259-2035, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Integrated Device Technology Inc. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 7 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 2 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-259-2035 |
| Primary Part Number | IDT7M864L120CB |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Integrated Device Technology Inc |
| Status | ACTIVE |
| Input Circuit Pattern | 23 INPUT |
| Body Width | 0.594 INCHES NOMINAL IN |
| Time Rating Per Chacteristic | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | RAM |
| Voltage Rating and Type Per Characteristic | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 28 PRINTED CIRCUIT |
| Body Height | 0.280 INCHES MAXIMUM IN |
| Body Length | 1.400 INCHES NOMINAL IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Features Provided | LOW POWER AND HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 4.0 WATTS |
| Inclosure Material | CERAMIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| IDT7M864L120CB | Integrated Device Technology Inc (USA) |
| F52001708 | Fsg Inc (USA) |
| F17006404 | Wespercorp Fsg Inc (USA) |
| F17006404 | Fsg Inc (USA) |
| 725004-944 | Raytheon Company Div Rmd Strategic (USA) |
| F52001708 | Wespercorp Fsg Inc (USA) |
| HM6264LP-12 | Hitachi Magnetics Corp Div of Hitachi Metals International Ltd (USA) |
NSN 5962-01-259-2035 is a Microcircuit,memory, manufactured by Integrated Device Technology Inc, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-259-2035 has 7 cross-referenced part numbers: IDT7M864L120CB (Integrated Device Technology Inc), F52001708 (Fsg Inc), F17006404 (Wespercorp Fsg Inc), F17006404 (Fsg Inc), 725004-944 (Raytheon Company Div Rmd Strategic) and 2 more.
There are 2 known substitutes for 5962-01-259-2035: 5962-01-307-5783, 5962-01-364-8008. Verify interchangeability with system specifications before substitution.
Key specifications for IDT7M864L120CB: Input Circuit Pattern: 23 INPUT; Body Width: 0.594 INCHES NOMINAL IN; Time Rating Per Chacteristic: 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Terminal Surface Treatment: SOLDER. 17 total characteristics are documented in the Federal Logistics Information System.