The Microcircuit,memory, cataloged under National Stock Number 5962-01-256-8892, is classified within Federal Supply Class 5962 (Microcircuits, Electronic) of the Electrical and Electronic Equipment Components group. The manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 specifications, cited from the U.S. Government catalog. The record lists 1 manufacturer part number for this item, enabling identification through both NSN and commercial part number lookups. 4 additional reference documents (drawings, advisory and superseded references) are recorded in the U.S. Government catalog. 2 items share a part number with this NSN in the catalog (possible match — not a government interchangeability claim). Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-256-8892 |
| Primary Part Number | 48032-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — Microcircuits, Electronic |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Input Circuit Pattern | 6 INPUT |
| Inclosure Material | CERAMIC |
| Terminal Surface Treatment | SOLDER |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Memory Device Type | ROM |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Maximum Power Dissipation Rating | 500.0 MILLIWATTS |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Acquisition Status | ACTIVE |
| DEMIL Code | DEMIL D — Destroy Item |
| Hazard | No hazard code in the DLA record (HMIC N) |
| Criticality Code | X |
| Part Number | Manufacturer |
|---|---|
| 48032-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| Reference | Meaning |
|---|---|
| ROM/PROM | 5/1 Secondary reference Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) |
| 722913-50 | 5/1 Secondary reference Raytheon Company Div Rmd Strategic |
| 726011-1 | 5/1 Secondary reference Raytheon Company Div Rmd Strategic |
| 726011-2 | 5/1 Secondary reference Raytheon Company Div Rmd Strategic |
NSN 5962-01-256-8892 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962, Microcircuits, Electronic. Status: active.
NSN 5962-01-256-8892 has 1 manufacturer part number on file: 48032-1 (Raytheon Company Div Rmd Strategic).
2 possible matches (shared part number, not a government interchangeability claim): 4240-01-568-4074, 4240-01-568-4075. Verify interchangeability with system specifications before substitution.
Key specifications for 48032-1: Input Circuit Pattern: 6 INPUT; Inclosure Material: CERAMIC; Terminal Surface Treatment: SOLDER; Body Width: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN. 19 specifications are documented in the U.S. Government catalog.
No hazard code in the DLA record (HMIC N). Hazard information on this page is shown exactly as it appears in the DLA record.
NSN 5962-01-256-8892 has DEMIL Code D. Demilitarization may be required before disposal or transfer to non-military entities.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-16.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.