The Microcircuit,memory, cataloged under National Stock Number 5962-01-245-5355, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 9 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-245-5355 |
| Primary Part Number | 44318-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Body Width | 0.310 INCHES MAXIMUM IN |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Features Provided | MONOLITHIC AND BIPOLAR AND PROGRAMMABLE |
| Inclosure Configuration | DUAL-IN-LINE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Case Outline Source and Designator | D-6 MIL-M-38510 |
| Terminal Type and Quantity | 18 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | ROM |
| Input Circuit Pattern | 12 INPUT |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Inclosure Material | CERAMIC |
| Body Length | 1.060 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 030 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/20602BVB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 44318-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 5962-3820602BVB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-245-5355 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-245-5355 has 4 cross-referenced part numbers: ROM/PROM FAMILY 030 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/20602BVB (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 44318-1 (Raytheon Company Div Rmd Strategic), 5962-3820602BVB (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 9 known substitutes for 5962-01-245-5355: 5962-01-173-8476, 5962-01-180-1393, 5962-01-180-1394 and 6 more. Verify interchangeability with system specifications before substitution.
Key specifications for 44318-1: Body Width: 0.310 INCHES MAXIMUM IN; Body Height: 0.185 INCHES MAXIMUM IN; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Features Provided: MONOLITHIC AND BIPOLAR AND PROGRAMMABLE. 18 total characteristics are documented in the Federal Logistics Information System.