The Microcircuit,memory, cataloged under National Stock Number 5962-01-242-6939, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-242-6939 |
| Primary Part Number | 47518-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Input Circuit Pattern | 14 INPUT |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Memory Device Type | PROM |
| Case Outline Source and Designator | D-3 MIL-M-38510 |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 1.0 WATTS |
| Body Length | 1.290 INCHES MAXIMUM IN |
| Features Provided | MONOLITHIC AND BIPOLAR AND SCHOTTKY |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Material | CERAMIC |
| Body Height | 0.150 INCHES MAXIMUM IN |
| Body Width | 0.610 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 47518-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 722942-50 | Raytheon Company Div Rmd Strategic (USA) |
| M38510/21002BJA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| ROM/PROM FAMILY 029 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 5962-3821002BJA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-242-6939 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-242-6939 has 5 cross-referenced part numbers: 47518-2 (Raytheon Company Div Rmd Strategic), 722942-50 (Raytheon Company Div Rmd Strategic), M38510/21002BJA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), ROM/PROM FAMILY 029 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 5962-3821002BJA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 12 known substitutes for 5962-01-242-6939: 5962-01-093-6160, 5962-01-132-7844, 5962-01-242-8690 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 47518-2: Input Circuit Pattern: 14 INPUT; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Memory Device Type: PROM; Case Outline Source and Designator: D-3 MIL-M-38510. 16 total characteristics are documented in the Federal Logistics Information System.