The Microcircuit,memory, cataloged under National Stock Number 5962-01-242-3552, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 10 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-242-3552 |
| Primary Part Number | 48591-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Features Provided | MONOLITHIC AND BIPOLAR AND PROGRAMMABLE |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | PROM |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Width | 0.310 INCHES MAXIMUM IN |
| Maximum Power Dissipation Rating | 739.0 MILLIWATTS |
| Inclosure Material | CERAMIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Input Circuit Pattern | 6 INPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722913-51 | Raytheon Company Div Rmd Strategic (USA) |
| 5962-3820702BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| ROM/PROM FAMILY 013 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 48591-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| M38510/20702BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-242-3552 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-242-3552 has 5 cross-referenced part numbers: 722913-51 (Raytheon Company Div Rmd Strategic), 5962-3820702BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), ROM/PROM FAMILY 013 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 48591-1 (Raytheon Company Div Rmd Strategic), M38510/20702BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 10 known substitutes for 5962-01-242-3552: 5962-01-242-3553, 5962-01-242-3554, 5962-01-242-4221 and 7 more. Verify interchangeability with system specifications before substitution.
Key specifications for 48591-1: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Features Provided: MONOLITHIC AND BIPOLAR AND PROGRAMMABLE; Body Length: 0.840 INCHES MAXIMUM IN. 17 total characteristics are documented in the Federal Logistics Information System.