PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

21-61228-8Microcircuit,memory

The Boeing Company Div Defense · NSN 5962-01-241-0645 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-241-0645 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-241-0645. Primary manufacturer part number: 21-61228-8.
Features
  • Microcircuit,memory — FSC 5962
  • Maximum Power Dissipation Rating: 1.5 WATTS
  • Terminal Surface Treatment: SOLDER
  • Time Rating Per Chacteristic: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
  • Memory Device Type: ROM
  • Voltage Rating and Type Per Characteristic: 26.5 VOLTS MAXIMUM POWER SOURCE
  • Terminal Type and Quantity: 24 PRINTED CIRCUIT
  • Inclosure Material: CERAMIC
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-241-0645, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is The Boeing Company Div Defense. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 8 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-241-0645
Primary Part Number21-61228-8
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerThe Boeing Company Div Defense
StatusACTIVE
Maximum Power Dissipation Rating1.5 WATTS
Terminal Surface TreatmentSOLDER
Time Rating Per Chacteristic450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Memory Device TypeROM
Voltage Rating and Type Per Characteristic26.5 VOLTS MAXIMUM POWER SOURCE
Terminal Type and Quantity24 PRINTED CIRCUIT
Inclosure MaterialCERAMIC
Storage Temp Range-65.0 TO 125.0 CELSIUS DEGC
Input Circuit Pattern14 INPUT
Body Length1.290 INCHES MAXIMUM IN
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Features ProvidedULTRAVIOLET ERASABLE AND HIGH SPEED AND W/TRANSPARENT LID AND STATIC OPERATION AND PROGRAMMABLE
Body Width0.514 INCHES MINIMUM AND 0.526 INCHES MAXIMUM IN
Output Logic FormN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
Body Height0.180 INCHES MAXIMUM IN
Inclosure ConfigurationDUAL-IN-LINE
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 8
5962-01-107-1082 INTERCHANGEABLE
Microcircuit,memory
5962-01-125-236221-59190-7 INTERCHANGEABLE
Microcircuit,memory
The Boeing Company Div Defense
5962-01-125-236321-59190-8 INTERCHANGEABLE
Microcircuit,memory
The Boeing Company Div Defense
5962-01-202-464621-61228-1 INTERCHANGEABLE
Microcircuit,memory
The Boeing Company Div Defense
5962-01-202-464721-61228-3 INTERCHANGEABLE
Microcircuit,memory
The Boeing Company Div Defense
5962-01-241-064421-61228-6 INTERCHANGEABLE
Microcircuit,memory
The Boeing Company Div Defense
5962-01-263-987921-61228-10 INTERCHANGEABLE
Microcircuit,memory
The Boeing Company Div Defense
5962-01-263-988021-61228-11 INTERCHANGEABLE
Microcircuit,memory
The Boeing Company Div Defense
Cross-Reference Index
Part NumberManufacturer
21-61228-8 PRIMARY The Boeing Company Div Defense (USA)
ROM/PROM Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
MM2716QM National Semiconductor Corporation (USA)
Related Parts
5962-01-107-1082INTERCHANGEABLE
MICROCIRCUIT,MEMORY
5962-01-125-2362INTERCHANGEABLE
MICROCIRCUIT,MEMORY
21-59190-7
5962-01-125-2363INTERCHANGEABLE
MICROCIRCUIT,MEMORY
21-59190-8
5962-01-202-4646INTERCHANGEABLE
MICROCIRCUIT,MEMORY
21-61228-1
5962-01-202-4647INTERCHANGEABLE
MICROCIRCUIT,MEMORY
21-61228-3
5962-01-241-0644INTERCHANGEABLE
MICROCIRCUIT,MEMORY
21-61228-6
5962-01-263-9879INTERCHANGEABLE
MICROCIRCUIT,MEMORY
21-61228-10
5962-01-263-9880INTERCHANGEABLE
MICROCIRCUIT,MEMORY
21-61228-11

Frequently Asked Questions

What is NSN 5962-01-241-0645?

NSN 5962-01-241-0645 is a Microcircuit,memory, manufactured by The Boeing Company Div Defense, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-241-0645?

NSN 5962-01-241-0645 has 3 cross-referenced part numbers: 21-61228-8 (The Boeing Company Div Defense), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), MM2716QM (National Semiconductor Corporation).

What NSN replaces 5962-01-241-0645?

There are 8 known substitutes for 5962-01-241-0645: 5962-01-107-1082, 5962-01-125-2362, 5962-01-125-2363 and 5 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 21-61228-8?

Key specifications for 21-61228-8: Maximum Power Dissipation Rating: 1.5 WATTS; Terminal Surface Treatment: SOLDER; Time Rating Per Chacteristic: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Memory Device Type: ROM. 16 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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