The Microcircuit,memory, cataloged under National Stock Number 5962-01-239-9677, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 8 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-239-9677 |
| Primary Part Number | 1064610-126A |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Features Provided | 3-STATE OUTPUT AND PROGRAMMABLE AND W/ENABLE AND HIGH SPEED |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Time Rating Per Chacteristic | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Memory Device Type | ROM |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Inclosure Material | CERAMIC |
| Input Circuit Pattern | 6 INPUT |
| Body Height | 0.120 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN |
| Body Length | 0.760 INCHES MINIMUM AND 0.790 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Width | 0.265 INCHES MINIMUM AND 0.285 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| MM5331-1J | Mmi/amd (USA) |
| 1064610-126A | Raytheon Company (USA) |
| G308250-1 | Raytheon Company Div Corp (USA) |
| G308250-1 | Raytheon Company Dba Raytheon Co (USA) |
| ROM/PROM FAMILY 013 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 1064610-126A | Raytheon Company Div Corp (USA) |
| HM1-7603-8 | Renesas Electronics America Inc (USA) |
| 1064610-126A PRIMARY | Raytheon Company Dba Raytheon Co (USA) |
NSN 5962-01-239-9677 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-239-9677 has 8 cross-referenced part numbers: MM5331-1J (Mmi/amd), 1064610-126A (Raytheon Company), G308250-1 (Raytheon Company Div Corp), G308250-1 (Raytheon Company Dba Raytheon Co), ROM/PROM FAMILY 013 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 3 more.
There are 12 known substitutes for 5962-01-239-9677: 5962-01-223-6454, 5962-01-237-3595, 5962-01-245-4532 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 1064610-126A: Features Provided: 3-STATE OUTPUT AND PROGRAMMABLE AND W/ENABLE AND HIGH SPEED; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Time Rating Per Chacteristic: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE. 16 total characteristics are documented in the Federal Logistics Information System.