The Microcircuit,memory, cataloged under National Stock Number 5962-01-236-3219, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 2 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-236-3219 |
| Primary Part Number | 971845-0221 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp |
| Status | ACTIVE |
| Body Height | 0.150 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Case Outline Source and Designator | D-3 MIL-M-38510 |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Body Length | 1.290 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 750.0 MILLIWATTS |
| Input Circuit Pattern | 14 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Features Provided | SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE |
| Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC AND GLASS |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 53S1681JS883B | Mmi/amd (USA) |
| 971845-0221 PRIMARY | Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp (USA) |
| AM27S291DMB | Advanced Micro Devices Inc Dba AMD Austin (USA) |
NSN 5962-01-236-3219 is a Microcircuit,memory, manufactured by Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-236-3219 has 4 cross-referenced part numbers: ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 53S1681JS883B (Mmi/amd), 971845-0221 (Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp), AM27S291DMB (Advanced Micro Devices Inc Dba AMD Austin).
There are 2 known substitutes for 5962-01-236-3219: 5962-01-171-7317, 5962-01-381-6390. Verify interchangeability with system specifications before substitution.
Key specifications for 971845-0221: Body Height: 0.150 INCHES MAXIMUM IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Terminal Surface Treatment: SOLDER; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE. 18 total characteristics are documented in the Federal Logistics Information System.