The Microcircuit,memory, cataloged under National Stock Number 5962-01-223-1281, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 20 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 2 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 3 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-223-1281 |
| Primary Part Number | 42028 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Device Type | ROM |
| Precious Material and Location | TERMINAL SURFACE OPTION GOLD |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Time Rating Per Chacteristic | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Precious Material | GOLD |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 500.0 MILLIWATTS |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 10 INPUT |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 42028 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-223-1281 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-223-1281 has 2 cross-referenced part numbers: ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 42028 (Raytheon Company Div Rmd Strategic).
There are 3 known substitutes for 5962-01-223-1281: 5950-00-751-9299, 5930-00-978-4463, 5210-01-379-2251. Verify interchangeability with system specifications before substitution.
Key specifications for 42028: Case Outline Source and Designator: D-2 MIL-M-38510; Memory Device Type: ROM; Precious Material and Location: TERMINAL SURFACE OPTION GOLD; Terminal Surface Treatment: SOLDER. 20 total characteristics are documented in the Federal Logistics Information System.