The Microcircuit,memory, cataloged under National Stock Number 5962-01-222-8750, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 2 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-222-8750 |
| Primary Part Number | 41509 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Terminal Surface Treatment | SOLDER |
| Precious Material and Location | TERMINAL SURFACES OPTION GOLD |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Precious Material | GOLD |
| Time Rating Per Chacteristic | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | ROM |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Input Circuit Pattern | 10 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Body Height | 0.185 INCHES NOMINAL IN |
| Features Provided | HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND SCHOTTKY |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Material | CERAMIC AND GLASS |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 41509 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-222-8750 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-222-8750 has 2 cross-referenced part numbers: 41509 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).
There are 6 known substitutes for 5962-01-222-8750: 3020-00-027-4732, 1660-00-831-5646, 5945-00-967-3616 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41509: Body Width: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Terminal Surface Treatment: SOLDER; Precious Material and Location: TERMINAL SURFACES OPTION GOLD. 19 total characteristics are documented in the Federal Logistics Information System.