The Microcircuit,memory, cataloged under National Stock Number 5962-01-211-4664, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 10 commercial cross-references from 10 manufacturers, enabling identification through both NSN and commercial part number lookups. 1 verified substitute exists in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-211-4664 |
| Primary Part Number | G286466-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company |
| Status | ACTIVE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Input Circuit Pattern | 18 INPUT |
| Memory Device Type | RAM |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 20 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Terminal Surface Treatment | SOLDER |
| Body Height | 0.098 INCHES NOMINAL IN |
| Maximum Power Dissipation Rating | 1.0 WATTS |
| Body Width | 0.310 INCHES NOMINAL IN |
| Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| Body Length | 1.000 INCHES NOMINAL IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Features Provided | HIGH PERFORMANCE AND STATIC OPERATION AND 3-STATE OUTPUT |
| Inclosure Material | CERAMIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| G286466-1 | Raytheon Company (USA) |
| 16001636 | Lockheed Corp Lockheed Electronics Co Inc (USA) |
| AM2167-55/BRA | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| IMS1400S-55M | Sgs-Thomson Microelectronics Inc (USA) |
| 6011258-001 | Bae Systems Information and Electronic Systems Integration Inc. Div Bae Systems Information & Electronic Systems Integration Inc (USA) |
| 5962PL0930418 | Jednolity Indeks Materialowy - Uniform Material Index (POL) |
| 16001636 | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems (USA) |
| G286466-1 | Raytheon Company Div Corp (USA) |
| 77A102493P001 | Lockheed Martin Corporation Div Rms (USA) |
| G286466-1 | Raytheon Company Dba Raytheon Co (USA) |
NSN 5962-01-211-4664 is a Microcircuit,memory, manufactured by Raytheon Company, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-211-4664 has 10 cross-referenced part numbers: G286466-1 (Raytheon Company), 16001636 (Lockheed Corp Lockheed Electronics Co Inc), AM2167-55/BRA (Advanced Micro Devices Inc Dba AMD Austin), IMS1400S-55M (Sgs-Thomson Microelectronics Inc), 6011258-001 (Bae Systems Information and Electronic Systems Integration Inc. Div Bae Systems Information & Electronic Systems Integration Inc) and 5 more.
There is 1 known substitute for 5962-01-211-4664: 5962-01-283-0730. Verify interchangeability with system specifications before substitution.
Key specifications for G286466-1: End Item Identification: AIRCRAFT, F-16;AIRCRAFT, GALAXY C-5; SUPPORT EQUIPMENT, B-1 AIRCRAFT, BALLISTIC MISSILE EARLY WARNING STS (BMEWS); PAVE PHASED ARRAY WARNING SYSTEM (PAWS); AIRCRAFT, STRATOLIFTER C-135; OVER THE HORIZON BACK SCANNER (OTH-B) PROGRAM (AN/FPS-118); Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Input Circuit Pattern: 18 INPUT; Memory Device Type: RAM. 17 total characteristics are documented in the Federal Logistics Information System.