The Microcircuit,memory, cataloged under National Stock Number 5962-01-204-7617, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 10 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-204-7617 |
| Primary Part Number | 41607 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 10 INPUT |
| Time Rating Per Chacteristic | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Memory Capacity | UNKNOWN |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | ROM |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Body Width | 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM IN |
| Features Provided | PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY AND WIRE-OR OUTPUTS |
| Body Height | 0.199 INCHES NOMINAL IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 41607 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 237 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 93436DMQB | Fairchild Semiconductor Corp (USA) |
| 722917-50 | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-204-7617 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-204-7617 has 4 cross-referenced part numbers: 41607 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 93436DMQB (Fairchild Semiconductor Corp), 722917-50 (Raytheon Company Div Rmd Strategic).
There are 10 known substitutes for 5962-01-204-7617: 3455-00-228-5294, 2590-00-559-1588, 6685-00-630-4519 and 7 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41607: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Input Circuit Pattern: 10 INPUT; Time Rating Per Chacteristic: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 18 total characteristics are documented in the Federal Logistics Information System.