The Microcircuit,memory, cataloged under National Stock Number 5962-01-204-7612, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-204-7612 |
| Primary Part Number | 41537 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Memory Device Type | ROM |
| Time Rating Per Chacteristic | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 05869-726015-2 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Memory Capacity | UNKNOWN |
| Inclosure Configuration | DUAL-IN-LINE |
| Inclosure Material | CERAMIC |
| Body Height | 0.150 INCHES MINIMUM AND 0.199 INCHES MAXIMUM IN |
| Features Provided | BIPOLAR AND HIGH SPEED AND PROGRAMMED |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Width | 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 237 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 41537 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 722917-50 | Raytheon Company Div Rmd Strategic (USA) |
| 93436DMQB | Fairchild Semiconductor Corp (USA) |
NSN 5962-01-204-7612 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-204-7612 has 4 cross-referenced part numbers: ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 41537 (Raytheon Company Div Rmd Strategic), 722917-50 (Raytheon Company Div Rmd Strategic), 93436DMQB (Fairchild Semiconductor Corp).
There are 5 known substitutes for 5962-01-204-7612: 5920-00-077-8520, 6680-00-445-5499, 5330-00-494-2433 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41537: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Body Length: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Memory Device Type: ROM. 18 total characteristics are documented in the Federal Logistics Information System.