The Microcircuit,memory, cataloged under National Stock Number 5962-01-204-6380, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 4 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-204-6380 |
| Primary Part Number | 41529 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Memory Device Type | ROM |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Capacity | UNKNOWN |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 05869-726015-2 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| Terminal Surface Treatment | SOLDER |
| Time Rating Per Chacteristic | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Body Height | 0.150 INCHES MINIMUM AND 0.199 INCHES MAXIMUM IN |
| Features Provided | BIPOLAR AND HIGH SPEED AND PROGRAMMED |
| Inclosure Material | CERAMIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Width | 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 93436DMQB | Fairchild Semiconductor Corp (USA) |
| 722917-50 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 237 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 41529 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-204-6380 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-204-6380 has 4 cross-referenced part numbers: 93436DMQB (Fairchild Semiconductor Corp), 722917-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 41529 (Raytheon Company Div Rmd Strategic).
There are 4 known substitutes for 5962-01-204-6380: 3040-00-336-9469, 6680-00-515-5915, 3020-00-528-7934 and 1 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41529: Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Memory Device Type: ROM; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE; Memory Capacity: UNKNOWN. 18 total characteristics are documented in the Federal Logistics Information System.