The Microcircuit,memory, cataloged under National Stock Number 5962-01-204-1645, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 7 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-204-1645 |
| Primary Part Number | 41650 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Features Provided | HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR |
| Time Rating Per Chacteristic | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Memory Capacity | UNKNOWN |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Input Circuit Pattern | 10 INPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Body Height | 0.199 INCHES NOMINAL IN |
| Body Width | 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 41650 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 93436DMQB | Fairchild Semiconductor Corp (USA) |
| 722917-50 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 237 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-204-1645 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-204-1645 has 4 cross-referenced part numbers: 41650 (Raytheon Company Div Rmd Strategic), 93436DMQB (Fairchild Semiconductor Corp), 722917-50 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 237 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).
There are 7 known substitutes for 5962-01-204-1645: 5950-00-651-5323, 5342-00-656-9867, 5340-00-706-0169 and 4 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41650: Inclosure Configuration: DUAL-IN-LINE; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Features Provided: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR; Time Rating Per Chacteristic: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 18 total characteristics are documented in the Federal Logistics Information System.