The Microcircuit,memory, cataloged under National Stock Number 5962-01-204-1333, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-204-1333 |
| Primary Part Number | 41710 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Input Circuit Pattern | 6 INPUT |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | ROM |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Maximum Power Dissipation Rating | 739.0 MILLIWATTS |
| Body Width | 0.310 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Features Provided | MONOLITHIC AND SCHOTTKY AND BIPOLAR |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 022 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/20701BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 41710 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-204-1333 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-204-1333 has 3 cross-referenced part numbers: ROM/PROM FAMILY 022 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/20701BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 41710 (Raytheon Company Div Rmd Strategic).
There are 6 known substitutes for 5962-01-204-1333: 5310-00-365-0206, 5960-00-627-6911, 2825-00-997-0103 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41710: Input Circuit Pattern: 6 INPUT; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 17 total characteristics are documented in the Federal Logistics Information System.