The Microcircuit,memory, cataloged under National Stock Number 5962-01-203-9746, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 2 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-203-9746 |
| Primary Part Number | 42643-1 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Features Provided | 3-STATE OUTPUT AND BIPOLAR AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | PROM |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Surface Treatment | SOLDER |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC OR GLASS OR METAL |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 42643-1 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 722912-50 | Raytheon Company Div Rmd Strategic (USA) |
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-203-9746 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-203-9746 has 4 cross-referenced part numbers: ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 42643-1 (Raytheon Company Div Rmd Strategic), 722912-50 (Raytheon Company Div Rmd Strategic), M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 2 known substitutes for 5962-01-203-9746: 3030-00-233-8046, 3040-01-009-4183. Verify interchangeability with system specifications before substitution.
Key specifications for 42643-1: Maximum Power Dissipation Rating: 794.0 MILLIWATTS; Features Provided: 3-STATE OUTPUT AND BIPOLAR AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP; Body Height: 0.185 INCHES MAXIMUM IN; Input Circuit Pattern: 10 INPUT. 18 total characteristics are documented in the Federal Logistics Information System.