The Microcircuit,memory, cataloged under National Stock Number 5962-01-203-8638, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 2 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-203-8638 |
| Primary Part Number | 42635 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Memory Device Type | PROM |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Inclosure Material | CERAMIC OR GLASS OR METAL |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Features Provided | 3-STATE OUTPUT AND BIPOLAR AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Input Circuit Pattern | 10 INPUT |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 42635 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| 722912-50 | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-203-8638 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-203-8638 has 4 cross-referenced part numbers: ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 42635 (Raytheon Company Div Rmd Strategic), 722912-50 (Raytheon Company Div Rmd Strategic).
There are 2 known substitutes for 5962-01-203-8638: 2530-00-530-3324, 5950-01-259-1470. Verify interchangeability with system specifications before substitution.
Key specifications for 42635: Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Terminal Surface Treatment: SOLDER; Voltage Rating and Type Per Characteristic: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE; Time Rating Per Chacteristic: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 18 total characteristics are documented in the Federal Logistics Information System.