The Microcircuit,memory, cataloged under National Stock Number 5962-01-203-7252, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-203-7252 |
| Primary Part Number | 42623 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Inclosure Configuration | DUAL-IN-LINE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Memory Capacity | UNKNOWN |
| Memory Device Type | PROM |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Material | CERAMIC |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722912-50 | Raytheon Company Div Rmd Strategic (USA) |
| 42623 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-203-7252 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-203-7252 has 4 cross-referenced part numbers: 722912-50 (Raytheon Company Div Rmd Strategic), 42623 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 5 known substitutes for 5962-01-203-7252: 5305-00-721-3113, 1650-00-766-8353, 5930-01-039-4728 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 42623: Maximum Power Dissipation Rating: 794.0 MILLIWATTS; Inclosure Configuration: DUAL-IN-LINE; Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Body Length: 0.840 INCHES MAXIMUM IN. 19 total characteristics are documented in the Federal Logistics Information System.