PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

717382-126Microcircuit,memory

Raytheon Company Div Rmd Strategic · NSN 5962-01-203-6766 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-203-6766 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-203-6766. Primary manufacturer part number: 717382-126.
Features
  • Microcircuit,memory — FSC 5962
  • Inclosure Material: CERAMIC
  • Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC
  • Memory Device Type: ROM
  • Memory Capacity: UNKNOWN
  • Terminal Surface Treatment: SOLDER
  • Terminal Type and Quantity: 16 PRINTED CIRCUIT
  • Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-203-6766, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 9 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-203-6766
Primary Part Number717382-126
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Div Rmd Strategic
StatusACTIVE
Inclosure MaterialCERAMIC
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Memory Device TypeROM
Memory CapacityUNKNOWN
Terminal Surface TreatmentSOLDER
Terminal Type and Quantity16 PRINTED CIRCUIT
Voltage Rating and Type Per Characteristic7.0 VOLTS MAXIMUM POWER SOURCE
Time Rating Per Chacteristic60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Test Data Document96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Body Height0.199 INCHES MAXIMUM IN
Inclosure ConfigurationDUAL-IN-LINE
Features ProvidedHERMETICALLY SEALED AND PROGRAMMABLE AND SCHOTTKY
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Body Length0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
Input Circuit Pattern10 INPUT
Body Width0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM IN
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 9
5962-01-190-5200717382-117 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-203-6764717382-114 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-203-6765717382-125 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-203-6767717382-127 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-203-7257717382-124 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-203-7258717382-115 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-242-693741411 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
5962-01-242-738641412 INTERCHANGEABLE
Microcircuit,digital
Raytheon Company Div Rmd Strategic
5962-01-242-738741414 INTERCHANGEABLE
Microcircuit,memory
Raytheon Company Div Rmd Strategic
Cross-Reference Index
Part NumberManufacturer
93436DMQB Fairchild Semiconductor Corp (USA)
717382-126 PRIMARY Raytheon Company Div Rmd Strategic (USA)
722902-50 Raytheon Company Div Rmd Strategic (USA)
TT717382-126 Raytheon Company Div Rmd Strategic (USA)
ROM/PROM Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
Related Parts
5962-01-190-5200INTERCHANGEABLE
MICROCIRCUIT,MEMORY
717382-117
5962-01-203-6764INTERCHANGEABLE
MICROCIRCUIT,MEMORY
717382-114
5962-01-203-6765INTERCHANGEABLE
MICROCIRCUIT,MEMORY
717382-125
5962-01-203-6767INTERCHANGEABLE
MICROCIRCUIT,MEMORY
717382-127
5962-01-203-7257INTERCHANGEABLE
MICROCIRCUIT,MEMORY
717382-124
5962-01-203-7258INTERCHANGEABLE
MICROCIRCUIT,MEMORY
717382-115
5962-01-242-6937INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41411
5962-01-242-7386INTERCHANGEABLE
MICROCIRCUIT,DIGITAL
41412
5962-01-242-7387INTERCHANGEABLE
MICROCIRCUIT,MEMORY
41414

Frequently Asked Questions

What is NSN 5962-01-203-6766?

NSN 5962-01-203-6766 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-203-6766?

NSN 5962-01-203-6766 has 5 cross-referenced part numbers: 93436DMQB (Fairchild Semiconductor Corp), 717382-126 (Raytheon Company Div Rmd Strategic), 722902-50 (Raytheon Company Div Rmd Strategic), TT717382-126 (Raytheon Company Div Rmd Strategic), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).

What NSN replaces 5962-01-203-6766?

There are 9 known substitutes for 5962-01-203-6766: 5962-01-190-5200, 5962-01-203-6764, 5962-01-203-6765 and 6 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 717382-126?

Key specifications for 717382-126: Inclosure Material: CERAMIC; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Memory Device Type: ROM; Memory Capacity: UNKNOWN. 17 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
PartsTable Design LLC · partstable.com