PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

42888Microcircuit,memory

Raytheon Company Div Rmd Strategic · NSN 5962-01-202-4660 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-202-4660 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-202-4660. Primary manufacturer part number: 42888.
Features
  • Microcircuit,memory — FSC 5962
  • Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC
  • Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC
  • Input Circuit Pattern: 10 INPUT
  • Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
  • Memory Device Type: PROM
  • Memory Capacity: UNKNOWN
  • Time Rating Per Chacteristic: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Microcircuit,memory, cataloged under National Stock Number 5962-01-202-4660, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5962-01-202-4660
Primary Part Number42888
Item NameMicrocircuit,memory
FSC / FSG5962 / 59 — No Item Name Available
ManufacturerRaytheon Company Div Rmd Strategic
StatusACTIVE
Output Logic FormTRANSISTOR-TRANSISTOR LOGIC
Operating Temp Range-55.0 TO 125.0 CELSIUS DEGC
Input Circuit Pattern10 INPUT
Test Data Document96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
Memory Device TypePROM
Memory CapacityUNKNOWN
Time Rating Per Chacteristic85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Terminal Surface TreatmentSOLDER
Voltage Rating and Type Per Characteristic-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Terminal Type and Quantity16 PRINTED CIRCUIT
Case Outline Source and DesignatorD-2 MIL-M-38510
Body Length0.840 INCHES MAXIMUM IN
Maximum Power Dissipation Rating794.0 MILLIWATTS
Storage Temp Range-65.0 TO 150.0 CELSIUS DEGC
Body Height0.185 INCHES MAXIMUM IN
Inclosure ConfigurationDUAL-IN-LINE
Inclosure MaterialCERAMIC OR GLASS OR METAL
Features ProvidedBIPOLAR AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT
Body Width0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 5
9540-01-071-4708 INTERCHANGEABLE
Angle,structural
9540-01-071-7372 INTERCHANGEABLE
Angle,structural
5950-01-267-2801367455-1 INTERCHANGEABLE
Reactor
Raytheon Company Dba Raytheon
5355-01-298-650642888 INTERCHANGEABLE
Dial,control
Aerosonic Llc
3120-01-524-957142888 INTERCHANGEABLE
Bearing,washer,thrust
Allied Systems Company Dba Allied Systems Co
Cross-Reference Index
Part NumberManufacturer
722912-50 Raytheon Company Div Rmd Strategic (USA)
42888 PRIMARY Raytheon Company Div Rmd Strategic (USA)
M38510/20402BEA Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M
ROM/PROM FAMILY 008 Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA)
Related Parts
9540-01-071-4708INTERCHANGEABLE
ANGLE,STRUCTURAL
9540-01-071-7372INTERCHANGEABLE
ANGLE,STRUCTURAL
5950-01-267-2801INTERCHANGEABLE
REACTOR
367455-1
5355-01-298-6506INTERCHANGEABLE
DIAL,CONTROL
42888
3120-01-524-9571INTERCHANGEABLE
BEARING,WASHER,THRUST
42888

Frequently Asked Questions

What is NSN 5962-01-202-4660?

NSN 5962-01-202-4660 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.

What are the part numbers for NSN 5962-01-202-4660?

NSN 5962-01-202-4660 has 4 cross-referenced part numbers: 722912-50 (Raytheon Company Div Rmd Strategic), 42888 (Raytheon Company Div Rmd Strategic), M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).

What NSN replaces 5962-01-202-4660?

There are 5 known substitutes for 5962-01-202-4660: 9540-01-071-4708, 9540-01-071-7372, 5950-01-267-2801 and 2 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 42888?

Key specifications for 42888: Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Input Circuit Pattern: 10 INPUT; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).. 20 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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