The Microcircuit,memory, cataloged under National Stock Number 5962-01-202-4654, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 4 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-202-4654 |
| Primary Part Number | 42906 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Input Circuit Pattern | 10 INPUT |
| Terminal Surface Treatment | SOLDER |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Memory Device Type | PROM |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Inclosure Material | CERAMIC AND GLASS |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Features Provided | BIPOLAR AND SCHOTTKY AND PROGRAMMED AND MONOLITHIC AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722912-50 | Raytheon Company Div Rmd Strategic (USA) |
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 42906 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-202-4654 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-202-4654 has 4 cross-referenced part numbers: 722912-50 (Raytheon Company Div Rmd Strategic), M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 42906 (Raytheon Company Div Rmd Strategic).
There are 4 known substitutes for 5962-01-202-4654: 5133-00-142-4960, 5342-00-321-4187, 6680-00-445-5499 and 1 more. Verify interchangeability with system specifications before substitution.
Key specifications for 42906: Input Circuit Pattern: 10 INPUT; Terminal Surface Treatment: SOLDER; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Time Rating Per Chacteristic: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 18 total characteristics are documented in the Federal Logistics Information System.