The Microcircuit,memory, cataloged under National Stock Number 5962-01-202-2955, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 1 verified substitute exists in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-202-2955 |
| Primary Part Number | 42887 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Inclosure Material | CERAMIC OR GLASS OR METAL |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Device Type | PROM |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Input Circuit Pattern | 10 INPUT |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Features Provided | BIPOLAR AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 722912-50 | Raytheon Company Div Rmd Strategic (USA) |
| 42887 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-202-2955 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-202-2955 has 4 cross-referenced part numbers: ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 722912-50 (Raytheon Company Div Rmd Strategic), 42887 (Raytheon Company Div Rmd Strategic).
There is 1 known substitute for 5962-01-202-2955: 5950-00-165-2596. Verify interchangeability with system specifications before substitution.
Key specifications for 42887: Maximum Power Dissipation Rating: 794.0 MILLIWATTS; Inclosure Material: CERAMIC OR GLASS OR METAL; Memory Capacity: UNKNOWN; Time Rating Per Chacteristic: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS. 20 total characteristics are documented in the Federal Logistics Information System.