The Microcircuit,memory, cataloged under National Stock Number 5962-01-186-5715, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Bae Systems Information and Electronic Systems Integration Inc.. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 2 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-186-5715 |
| Primary Part Number | 331233-15 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Bae Systems Information and Electronic Systems Integration Inc. |
| Status | ACTIVE |
| Time Rating Per Chacteristic | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Memory Capacity | UNKNOWN |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-3 MIL-M-38510 |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 1.290 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY |
| Maximum Power Dissipation Rating | 1.02 WATTS |
| Body Height | 0.210 INCHES NOMINAL IN |
| Inclosure Material | CERAMIC AND GLASS |
| Body Width | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN |
| Input Circuit Pattern | 14 INPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 331233-15 PRIMARY | Bae Systems Information and Electronic Systems Integration Inc. (USA) |
| 701735 | Bae Systems Information and Electronic Systems Integration Inc. (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| M38510/21002BJB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
NSN 5962-01-186-5715 is a Microcircuit,memory, manufactured by Bae Systems Information and Electronic Systems Integration Inc., classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-186-5715 has 4 cross-referenced part numbers: 331233-15 (Bae Systems Information and Electronic Systems Integration Inc.), 701735 (Bae Systems Information and Electronic Systems Integration Inc.), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), M38510/21002BJB (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M).
There are 2 known substitutes for 5962-01-186-5715: 2540-01-047-1871, 3110-01-480-6966. Verify interchangeability with system specifications before substitution.
Key specifications for 331233-15: Time Rating Per Chacteristic: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS; Voltage Rating and Type Per Characteristic: 5.5 VOLTS MAXIMUM POWER SOURCE; Memory Device Type: ROM; Terminal Type and Quantity: 24 PRINTED CIRCUIT. 19 total characteristics are documented in the Federal Logistics Information System.