The Microcircuit,memory, cataloged under National Stock Number 5962-01-180-4301, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 4 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-180-4301 |
| Primary Part Number | 41130 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Time Rating Per Chacteristic | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Memory Capacity | UNKNOWN |
| Features Provided | HERMETICALLY SEALED AND PROGRAMMABLE AND SCHOTTKY AND HIGH SPEED AND 3-STATE OUTPUT |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Input Circuit Pattern | 10 INPUT |
| Body Width | 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Body Height | 0.199 INCHES NOMINAL IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 722912-50 | Raytheon Company Div Rmd Strategic (USA) |
| 41130 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 93446DMQC | Fairchild Semiconductor Corp (USA) |
NSN 5962-01-180-4301 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-180-4301 has 4 cross-referenced part numbers: 722912-50 (Raytheon Company Div Rmd Strategic), 41130 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 93446DMQC (Fairchild Semiconductor Corp).
There are 6 known substitutes for 5962-01-180-4301: 5821-00-041-3475, 5133-00-189-9320, 6625-01-178-8879 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 41130: Terminal Type and Quantity: 16 PRINTED CIRCUIT; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).; Memory Device Type: ROM; Terminal Surface Treatment: SOLDER. 17 total characteristics are documented in the Federal Logistics Information System.