The Microcircuit,memory, cataloged under National Stock Number 5962-01-173-7797, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-173-7797 |
| Primary Part Number | 40485 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Inclosure Configuration | DUAL-IN-LINE |
| Input Circuit Pattern | 10 INPUT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Device Type | PROM |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Material | CERAMIC |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 722906-52 | Raytheon Company Div Rmd Strategic (USA) |
| 40485 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| S82S131F/883B | Philips Semiconductors Inc (USA) |
NSN 5962-01-173-7797 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-173-7797 has 5 cross-referenced part numbers: ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722906-52 (Raytheon Company Div Rmd Strategic), 40485 (Raytheon Company Div Rmd Strategic), M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), S82S131F/883B (Philips Semiconductors Inc).
There are 6 known substitutes for 5962-01-173-7797: 3455-00-254-8467, 2925-00-315-8384, 5961-00-351-6134 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 40485: Maximum Power Dissipation Rating: 794.0 MILLIWATTS; Inclosure Configuration: DUAL-IN-LINE; Input Circuit Pattern: 10 INPUT; Test Data Document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).. 19 total characteristics are documented in the Federal Logistics Information System.