The Microcircuit,memory, cataloged under National Stock Number 5962-01-173-7790, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 9 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-173-7790 |
| Primary Part Number | 40478 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Inclosure Configuration | DUAL-IN-LINE |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Capacity | UNKNOWN |
| Memory Device Type | PROM |
| Terminal Surface Treatment | SOLDER |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| M38510/20402BEA | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| S82S131F/883B | Philips Semiconductors Inc (USA) |
| 722906-52 | Raytheon Company Div Rmd Strategic (USA) |
| 40478 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-173-7790 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-173-7790 has 5 cross-referenced part numbers: M38510/20402BEA (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), S82S131F/883B (Philips Semiconductors Inc), 722906-52 (Raytheon Company Div Rmd Strategic), 40478 (Raytheon Company Div Rmd Strategic), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)).
There are 9 known substitutes for 5962-01-173-7790: 5315-00-051-9883, 5330-00-186-1273, 3455-00-254-8470 and 6 more. Verify interchangeability with system specifications before substitution.
Key specifications for 40478: Maximum Power Dissipation Rating: 794.0 MILLIWATTS; Body Length: 0.840 INCHES MAXIMUM IN; Inclosure Configuration: DUAL-IN-LINE; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 19 total characteristics are documented in the Federal Logistics Information System.