The Microcircuit,memory, cataloged under National Stock Number 5962-01-173-7736, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Technical Services Company. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 8 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-173-7736 |
| Primary Part Number | 8070732-010 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Technical Services Company |
| Status | ACTIVE |
| Input Circuit Pattern | 10 INPUT |
| Voltage Rating and Type Per Characteristic | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| Current Rating Per Characteristic | 140.00 MILLIAMPERES MAXIMUM SUPPLY |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM DELAY NS |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Device Type | PROM |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Surface Treatment | SOLDER |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Inclosure Configuration | DUAL-IN-LINE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Features Provided | HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND MONOLITHIC AND PROGRAMMED |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 8070732-010 | Raytheon Technical Services Company (USA) |
| 4014667-347 | Raytheon Technical Services Company (USA) |
| HM1-7621-5 | Renesas Electronics America Inc (USA) |
| M38510/20402BEB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| ROM/PROM FAMILY 008 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 4004456 | Raytheon Technical Services Company (USA) |
| 8070732 | Ogden Air Logistics Center (USA) |
| SK010295 | Raytheon Technical Services Company (USA) |
NSN 5962-01-173-7736 is a Microcircuit,memory, manufactured by Raytheon Technical Services Company, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-173-7736 has 8 cross-referenced part numbers: 8070732-010 (Raytheon Technical Services Company), 4014667-347 (Raytheon Technical Services Company), HM1-7621-5 (Renesas Electronics America Inc), M38510/20402BEB (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), ROM/PROM FAMILY 008 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 3 more.
There are 5 known substitutes for 5962-01-173-7736: 5962-01-079-4980, 5962-01-131-9297, 5962-01-175-3130 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 8070732-010: Input Circuit Pattern: 10 INPUT; Voltage Rating and Type Per Characteristic: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE; Current Rating Per Characteristic: 140.00 MILLIAMPERES MAXIMUM SUPPLY; Time Rating Per Chacteristic: 85.00 NANOSECONDS MAXIMUM DELAY NS. 19 total characteristics are documented in the Federal Logistics Information System.