Raytheon Company Div Rmd Strategic · NSN 5962-01-170-1719 · FSC 5962 · No Item Name Available
Verified by PartsTable
NSN 5962-01-170-1719 — this item is cataloged by the U.S. Government under National Stock Number 5962-01-170-1719. Primary manufacturer part number: 41101.
5962-01-170-1719 — No Item Name Available illustration
Features
Microcircuit,memory — FSC 5962
Input Circuit Pattern: 10 INPUT
Memory Device Type: ROM
Voltage Rating and Type Per Characteristic: 5.5 VOLTS NOMINAL POWER SOURCE
Terminal Type and Quantity: 16 PRINTED CIRCUIT
Terminal Surface Treatment: SOLDER
Time Rating Per Chacteristic: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Operating Temp Range: +0.0 TO 75.0 CELSIUS DEGC
Applications
Industrial maintenance and repair
Government and military logistics
Equipment overhaul and refurbishment
General Description
The Microcircuit,memory, cataloged under National Stock Number 5962-01-170-1719, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 2 commercial cross-references from 1 manufacturer, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
Technical Specifications
Parameter
Value
NSN
5962-01-170-1719
Primary Part Number
41101
Item Name
Microcircuit,memory
FSC / FSG
5962 / 59 — No Item Name Available
Manufacturer
Raytheon Company Div Rmd Strategic
Status
ACTIVE
Input Circuit Pattern
10 INPUT
Memory Device Type
ROM
Voltage Rating and Type Per Characteristic
5.5 VOLTS NOMINAL POWER SOURCE
Terminal Type and Quantity
16 PRINTED CIRCUIT
Terminal Surface Treatment
SOLDER
Time Rating Per Chacteristic
50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS
Operating Temp Range
+0.0 TO 75.0 CELSIUS DEGC
Storage Temp Range
-65.0 TO 150.0 CELSIUS DEGC
Body Width
0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN
Maximum Power Dissipation Rating
614.0 MILLIWATTS
Output Logic Form
TRANSISTOR-TRANSISTOR LOGIC
Inclosure Configuration
DUAL-IN-LINE
Inclosure Material
CERAMIC
Features Provided
HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT
NSN 5962-01-170-1719 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
What are the part numbers for NSN 5962-01-170-1719?
NSN 5962-01-170-1719 has 2 cross-referenced part numbers: 722905-50 (Raytheon Company Div Rmd Strategic), 41101 (Raytheon Company Div Rmd Strategic).
What NSN replaces 5962-01-170-1719?
There are 12 known substitutes for 5962-01-170-1719: 1560-00-117-9359, 5340-00-518-5080, 4820-00-654-2938 and 9 more. Verify interchangeability with system specifications before substitution.
What are the specifications of 41101?
Key specifications for 41101: Input Circuit Pattern: 10 INPUT; Memory Device Type: ROM; Voltage Rating and Type Per Characteristic: 5.5 VOLTS NOMINAL POWER SOURCE; Terminal Type and Quantity: 16 PRINTED CIRCUIT. 16 total characteristics are documented in the Federal Logistics Information System.
✓ Validated with multiple authoritative sources, including Government, OEM, and Certified sources.