The Microcircuit,memory, cataloged under National Stock Number 5962-01-163-4163, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Northrop Grumman Corp Electronic Systems Defensive System Div. Government technical data includes 19 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 5 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 2 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-163-4163 |
| Primary Part Number | 339024 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Northrop Grumman Corp Electronic Systems Defensive System Div |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Memory Device Type | ROM |
| Test Data Document | 98453-339024 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Inclosure Material | CERAMIC AND GLASS |
| Body Height | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND HIGH IMPEDANCE |
| Body Width | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Maximum Power Dissipation Rating | 794.0 MILLIWATTS |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Configuration | DUAL-IN-LINE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| HM1-7621-8 | Renesas Electronics America Inc (USA) |
| 11568805-2 | Us Army Aviation and Missile Command (USA) |
| M38510/20402BEB | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| ROM/PROM FAMILY 005 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 339024 PRIMARY | Northrop Grumman Corp Electronic Systems Defensive System Div (USA) |
NSN 5962-01-163-4163 is a Microcircuit,memory, manufactured by Northrop Grumman Corp Electronic Systems Defensive System Div, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-163-4163 has 5 cross-referenced part numbers: HM1-7621-8 (Renesas Electronics America Inc), 11568805-2 (Us Army Aviation and Missile Command), M38510/20402BEB (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), ROM/PROM FAMILY 005 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 339024 (Northrop Grumman Corp Electronic Systems Defensive System Div).
There are 2 known substitutes for 5962-01-163-4163: 5962-00-172-5570, 5962-01-136-9357. Verify interchangeability with system specifications before substitution.
Key specifications for 339024: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Body Length: 0.840 INCHES MAXIMUM IN; Voltage Rating and Type Per Characteristic: 5.5 VOLTS MAXIMUM POWER SOURCE; Memory Device Type: ROM. 19 total characteristics are documented in the Federal Logistics Information System.