The Microcircuit,memory, cataloged under National Stock Number 5962-01-162-4270, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 16 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 12 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-162-4270 |
| Primary Part Number | 932684-505B |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Inclosure Material | CERAMIC |
| Terminal Type and Quantity | 16 FLAT LEADS |
| Terminal Surface Treatment | SOLDER |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 82577-932684 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Memory Device Type | ROM |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Input Circuit Pattern | 10 INPUT |
| Body Height | 0.085 INCHES MAXIMUM IN |
| Features Provided | BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Width | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Inclosure Configuration | FLAT PACK |
| Body Length | 0.440 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 1010 | Mmi/amd (USA) |
| 53S141W/883B | Mmi/amd (USA) |
| TBP24S10W | Texas Instruments Incorporated (USA) |
| 932684-505B PRIMARY | Raytheon Company Dba Raytheon (USA) |
| S82S129WJ | Philips Semiconductors Inc (USA) |
| CC1643 | Philips Semiconductors Inc (USA) |
| AM27S21/BFA | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| 5301-1F | Mmi/amd (USA) |
| 82S129/BFA | Philips Semiconductors Inc (USA) |
| B1584-505B | Renesas Electronics America Inc (USA) |
| SN91026W | Texas Instruments Incorporated (USA) |
| HM9-7611 | Renesas Electronics America Inc (USA) |
NSN 5962-01-162-4270 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-162-4270 has 12 cross-referenced part numbers: 1010 (Mmi/amd), 53S141W/883B (Mmi/amd), TBP24S10W (Texas Instruments Incorporated), 932684-505B (Raytheon Company Dba Raytheon), S82S129WJ (Philips Semiconductors Inc) and 7 more.
There are 12 known substitutes for 5962-01-162-4270: 5962-01-069-5041, 5962-01-069-5042, 5962-01-069-5053 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932684-505B: Inclosure Material: CERAMIC; Terminal Type and Quantity: 16 FLAT LEADS; Terminal Surface Treatment: SOLDER; Voltage Rating and Type Per Characteristic: 5.5 VOLTS MAXIMUM POWER SOURCE. 16 total characteristics are documented in the Federal Logistics Information System.