The Microcircuit,memory, cataloged under National Stock Number 5962-01-111-3462, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 15 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 6 commercial cross-references from 4 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-111-3462 |
| Primary Part Number | 44146-2 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | ACTIVE |
| Features Provided | BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT |
| Terminal Type and Quantity | 16 PRINTED CIRCUIT |
| Voltage Rating and Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
| Terminal Surface Treatment | SOLDER |
| Case Outline Source and Designator | D-2 MIL-M-38510 |
| Memory Device Type | ROM |
| Body Width | 0.310 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.840 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Height | 0.185 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC |
| Input Circuit Pattern | 6 INPUT |
| Inclosure Configuration | DUAL-IN-LINE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 10331843 | Nimikkeistokeskus Ncb Finland (FIN) |
| 722907-8 | Raytheon Company Div Rmd Strategic (USA) |
| ROM/PROM | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 722907-50 | Raytheon Company Div Rmd Strategic (USA) |
| AM27S19/BEA | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| 44146-2 PRIMARY | Raytheon Company Div Rmd Strategic (USA) |
NSN 5962-01-111-3462 is a Microcircuit,memory, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-111-3462 has 6 cross-referenced part numbers: 10331843 (Nimikkeistokeskus Ncb Finland), 722907-8 (Raytheon Company Div Rmd Strategic), ROM/PROM (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 722907-50 (Raytheon Company Div Rmd Strategic), AM27S19/BEA (Advanced Micro Devices Inc Dba AMD Austin) and 1 more.
There are 12 known substitutes for 5962-01-111-3462: 5962-01-088-9819, 5962-01-106-0863, 5962-01-111-0434 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 44146-2: Features Provided: BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT; Terminal Type and Quantity: 16 PRINTED CIRCUIT; Voltage Rating and Type Per Characteristic: 7.0 VOLTS MAXIMUM POWER SOURCE; Terminal Surface Treatment: SOLDER. 18 total characteristics are documented in the Federal Logistics Information System.