The Microcircuit,memory, cataloged under National Stock Number 5962-01-089-1037, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 11 commercial cross-references from 8 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-089-1037 |
| Primary Part Number | 932820-226 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Body Height | 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Memory Device Type | ROM |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 16 FLAT LEADS |
| Time Rating Per Chacteristic | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Terminal Surface Treatment | GOLD |
| Memory Capacity | UNKNOWN |
| Inclosure Material | CERAMIC AND GLASS |
| Body Width | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| Inclosure Configuration | FLAT PACK |
| Maximum Power Dissipation Rating | 910.0 MILLIWATTS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.440 INCHES MAXIMUM IN |
| Input Circuit Pattern | 10 INPUT |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| B2054-226 | Renesas Electronics America Inc (USA) |
| SN54S287W | Texas Instruments Incorporated (USA) |
| HM9-7611-2 | Renesas Electronics America Inc (USA) |
| 932820-226 PRIMARY | Raytheon Company Dba Raytheon (USA) |
| ROM/PROM FAMILY 015 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| CC5193-226 | Philips Semiconductors Inc (USA) |
| S82S129W | Philips Semiconductors Inc (USA) |
| HR10933 | Fairchild Semiconductor Corp (USA) |
| DH75681-226 | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| 18330 | Mmi/amd (USA) |
| MM5301-1F | Mmi/amd (USA) |
NSN 5962-01-089-1037 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-089-1037 has 11 cross-referenced part numbers: B2054-226 (Renesas Electronics America Inc), SN54S287W (Texas Instruments Incorporated), HM9-7611-2 (Renesas Electronics America Inc), 932820-226 (Raytheon Company Dba Raytheon), ROM/PROM FAMILY 015 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 6 more.
There are 6 known substitutes for 5962-01-089-1037: 5330-00-004-3211, 5330-00-297-4538, 5340-01-149-0656 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932820-226: Body Height: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Memory Device Type: ROM; Voltage Rating and Type Per Characteristic: 5.5 VOLTS MAXIMUM POWER SOURCE. 17 total characteristics are documented in the Federal Logistics Information System.