The Microcircuit,memory, cataloged under National Stock Number 5962-01-077-0394, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 4 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-077-0394 |
| Primary Part Number | 932821-6 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 16 FLAT LEADS |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Memory Device Type | ROM |
| Test Data Document | 82577-932623 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Body Width | 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| Input Circuit Pattern | 6 INPUT |
| Maximum Power Dissipation Rating | 500.0 MILLIWATTS |
| Inclosure Configuration | FLAT PACK |
| Inclosure Material | CERAMIC AND GLASS |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Body Length | 0.440 INCHES MAXIMUM IN |
| Body Height | 0.085 INCHES MAXIMUM IN |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| MMI5331-1F | Mmi/amd (USA) |
| HM9-7603-2 | Renesas Electronics America Inc (USA) |
| S82S123W | Philips Semiconductors Inc (USA) |
| CC5190-6 | Philips Semiconductors Inc (USA) |
| ROM/PROM FAMILY 019 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| SN54S288W-00 | Texas Instruments Incorporated (USA) |
| B2051-6 | Renesas Electronics America Inc (USA) |
| 932821-6 PRIMARY | Raytheon Company Dba Raytheon (USA) |
| 17897 | Mmi/amd (USA) |
NSN 5962-01-077-0394 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-077-0394 has 9 cross-referenced part numbers: MMI5331-1F (Mmi/amd), HM9-7603-2 (Renesas Electronics America Inc), S82S123W (Philips Semiconductors Inc), CC5190-6 (Philips Semiconductors Inc), ROM/PROM FAMILY 019 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 4 more.
There are 4 known substitutes for 5962-01-077-0394: 3455-00-243-2493, 5962-01-077-0391, 5962-01-077-0392 and 1 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932821-6: Features Provided: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE; Terminal Surface Treatment: SOLDER; Terminal Type and Quantity: 16 FLAT LEADS; Voltage Rating and Type Per Characteristic: 5.5 VOLTS MAXIMUM POWER SOURCE. 18 total characteristics are documented in the Federal Logistics Information System.