The Microcircuit,memory, cataloged under National Stock Number 5962-01-076-8399, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 12 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-076-8399 |
| Primary Part Number | 932821-3 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE |
| Terminal Surface Treatment | SOLDER |
| Memory Device Type | ROM |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Memory Capacity | UNKNOWN |
| Time Rating Per Chacteristic | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 84.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Test Data Document | 82577-932821 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Terminal Type and Quantity | 16 FLAT LEADS |
| Inclosure Material | CERAMIC AND GLASS |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Length | 0.440 INCHES MAXIMUM IN |
| Inclosure Configuration | FLAT PACK |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 6 INPUT |
| Maximum Power Dissipation Rating | 910.0 MILLIWATTS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Width | 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| Body Height | 0.085 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 932821-3 PRIMARY | Raytheon Company Dba Raytheon (USA) |
| S82S123W | Philips Semiconductors Inc (USA) |
| SN54S288W | Texas Instruments Incorporated (USA) |
| B2051-3 | Renesas Electronics America Inc (USA) |
| HM9-7603-2 | Renesas Electronics America Inc (USA) |
| CC5190-3 | Philips Semiconductors Inc (USA) |
| 17894 | Mmi/amd (USA) |
| MM5331-1F | Mmi/amd (USA) |
| ROM/PROM FAMILY 019 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
NSN 5962-01-076-8399 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-076-8399 has 9 cross-referenced part numbers: 932821-3 (Raytheon Company Dba Raytheon), S82S123W (Philips Semiconductors Inc), SN54S288W (Texas Instruments Incorporated), B2051-3 (Renesas Electronics America Inc), HM9-7603-2 (Renesas Electronics America Inc) and 4 more.
There are 12 known substitutes for 5962-01-076-8399: 5305-01-024-9234, 4820-01-045-9427, 5962-01-076-7964 and 9 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932821-3: Features Provided: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE; Terminal Surface Treatment: SOLDER; Memory Device Type: ROM; Voltage Rating and Type Per Characteristic: 5.5 VOLTS MAXIMUM POWER SOURCE. 18 total characteristics are documented in the Federal Logistics Information System.