The Microcircuit,memory, cataloged under National Stock Number 5962-01-076-6619, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 10 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-076-6619 |
| Primary Part Number | 932820-90 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Body Width | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Terminal Type and Quantity | 16 FLAT LEADS |
| Time Rating Per Chacteristic | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Body Length | 0.440 INCHES MAXIMUM IN |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 10 INPUT |
| Inclosure Configuration | FLAT PACK |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE |
| Body Height | 0.085 INCHES MAXIMUM IN |
| Inclosure Material | CERAMIC AND GLASS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Maximum Power Dissipation Rating | 910.0 MILLIWATTS |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| SN92871W | Texas Instruments Incorporated (USA) |
| 932820-90 PRIMARY | Raytheon Company Dba Raytheon (USA) |
| S82S129W | Philips Semiconductors Inc (USA) |
| ROM/PROM FAMILY 015 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| B2054-90 | Renesas Electronics America Inc (USA) |
| CC5193-90 | Philips Semiconductors Inc (USA) |
| 17725 | Mmi/amd (USA) |
| SN54S287W | Texas Instruments Incorporated (USA) |
| HM9-7611-2 | Renesas Electronics America Inc (USA) |
| MM5301-1F | Mmi/amd (USA) |
NSN 5962-01-076-6619 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-076-6619 has 10 cross-referenced part numbers: SN92871W (Texas Instruments Incorporated), 932820-90 (Raytheon Company Dba Raytheon), S82S129W (Philips Semiconductors Inc), ROM/PROM FAMILY 015 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), B2054-90 (Renesas Electronics America Inc) and 5 more.
There are 5 known substitutes for 5962-01-076-6619: 9540-00-414-3793, 3030-01-211-7080, 3030-01-314-4372 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932820-90: Body Width: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN; Output Logic Form: TRANSISTOR-TRANSISTOR LOGIC; Memory Device Type: ROM; Terminal Surface Treatment: SOLDER. 17 total characteristics are documented in the Federal Logistics Information System.