The Microcircuit,memory, cataloged under National Stock Number 5962-01-076-6615, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 10 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 3 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-076-6615 |
| Primary Part Number | 932820-69 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Body Length | 0.440 INCHES MAXIMUM IN |
| Maximum Power Dissipation Rating | 910.0 MILLIWATTS |
| Time Rating Per Chacteristic | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Device Type | ROM |
| Terminal Type and Quantity | 16 FLAT LEADS |
| Memory Capacity | UNKNOWN |
| Terminal Surface Treatment | SOLDER |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Input Circuit Pattern | 10 INPUT |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Inclosure Material | CERAMIC AND GLASS |
| Body Width | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| Inclosure Configuration | FLAT PACK |
| Body Height | 0.085 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| HM9-7611-2 | Renesas Electronics America Inc (USA) |
| S82S129W | Philips Semiconductors Inc (USA) |
| SN54S287W | Texas Instruments Incorporated (USA) |
| MM5301-1F | Mmi/amd (USA) |
| ROM/PROM FAMILY 015 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| CC5193-69 | Philips Semiconductors Inc (USA) |
| B2054-69 | Renesas Electronics America Inc (USA) |
| SN92850W | Texas Instruments Incorporated (USA) |
| 17704 | Mmi/amd (USA) |
| 932820-69 PRIMARY | Raytheon Company Dba Raytheon (USA) |
NSN 5962-01-076-6615 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-076-6615 has 10 cross-referenced part numbers: HM9-7611-2 (Renesas Electronics America Inc), S82S129W (Philips Semiconductors Inc), SN54S287W (Texas Instruments Incorporated), MM5301-1F (Mmi/amd), ROM/PROM FAMILY 015 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)) and 5 more.
There are 3 known substitutes for 5962-01-076-6615: 3455-00-227-9807, 6625-01-340-3664, 7930-01-566-2397. Verify interchangeability with system specifications before substitution.
Key specifications for 932820-69: Operating Temp Range: -55.0 TO 125.0 CELSIUS DEGC; Body Length: 0.440 INCHES MAXIMUM IN; Maximum Power Dissipation Rating: 910.0 MILLIWATTS; Time Rating Per Chacteristic: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS. 18 total characteristics are documented in the Federal Logistics Information System.