The Microcircuit,memory, cataloged under National Stock Number 5962-01-076-6612, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon. Government technical data includes 18 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-076-6612 |
| Primary Part Number | 932820-99 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 150.0 CELSIUS DEGC |
| Inclosure Material | CERAMIC AND GLASS |
| Memory Device Type | ROM |
| Terminal Surface Treatment | SOLDER |
| Time Rating Per Chacteristic | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| Test Data Document | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Memory Capacity | UNKNOWN |
| Terminal Type and Quantity | 16 FLAT LEADS |
| Voltage Rating and Type Per Characteristic | 5.5 VOLTS MAXIMUM POWER SOURCE |
| Maximum Power Dissipation Rating | 910.0 MILLIWATTS |
| Operating Temp Range | -55.0 TO 125.0 CELSIUS DEGC |
| Input Circuit Pattern | 10 INPUT |
| Body Height | 0.085 INCHES MAXIMUM IN |
| Inclosure Configuration | FLAT PACK |
| Body Length | 0.440 INCHES MAXIMUM IN |
| Output Logic Form | TRANSISTOR-TRANSISTOR LOGIC |
| Body Width | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM IN |
| Features Provided | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| S82S129W | Philips Semiconductors Inc (USA) |
| HM9-7611-2 | Renesas Electronics America Inc (USA) |
| ROM/PROM FAMILY 015 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 18297 | Mmi/amd (USA) |
| CC5193-99 | Philips Semiconductors Inc (USA) |
| B2054-99 | Renesas Electronics America Inc (USA) |
| SN93003W | Texas Instruments Incorporated (USA) |
| 932820-99 PRIMARY | Raytheon Company Dba Raytheon (USA) |
| SN54S287W | Texas Instruments Incorporated (USA) |
NSN 5962-01-076-6612 is a Microcircuit,memory, manufactured by Raytheon Company Dba Raytheon, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-076-6612 has 9 cross-referenced part numbers: S82S129W (Philips Semiconductors Inc), HM9-7611-2 (Renesas Electronics America Inc), ROM/PROM FAMILY 015 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 18297 (Mmi/amd), CC5193-99 (Philips Semiconductors Inc) and 4 more.
There are 5 known substitutes for 5962-01-076-6612: 5950-00-086-8845, 1660-00-313-5644, 5935-00-371-2810 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 932820-99: Storage Temp Range: -65.0 TO 150.0 CELSIUS DEGC; Inclosure Material: CERAMIC AND GLASS; Memory Device Type: ROM; Terminal Surface Treatment: SOLDER. 18 total characteristics are documented in the Federal Logistics Information System.