The Microcircuit,memory, cataloged under National Stock Number 5962-01-071-5331, is classified within Federal Supply Class 5962 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company. Government technical data includes 17 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 8 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 5 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5962-01-071-5331 |
| Primary Part Number | 95-00274-004 |
| Item Name | Microcircuit,memory |
| FSC / FSG | 5962 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company |
| Status | ACTIVE |
| Storage Temp Range | -65.0 TO 125.0 CELSIUS DEGC |
| Features Provided | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
| Memory Device Type | ROM |
| Body Width | 0.500 INCHES MINIMUM AND 0.600 INCHES MAXIMUM IN |
| Voltage Rating and Type Per Characteristic | 15.0 VOLTS MAXIMUM POWER SOURCE |
| Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| Operating Temp Range | -25.0 TO 85.0 CELSIUS DEGC |
| Input Circuit Pattern | 10 INPUT |
| Maximum Power Dissipation Rating | 800.0 MILLIWATTS |
| Output Logic Form | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| Inclosure Material | CERAMIC AND GLASS |
| Terminal Type and Quantity | 24 PRINTED CIRCUIT |
| Time Rating Per Chacteristic | 2000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 2000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| Inclosure Configuration | DUAL-IN-LINE |
| Body Length | 1.200 INCHES MINIMUM AND 1.300 INCHES MAXIMUM IN |
| Body Height | 0.200 INCHES MAXIMUM IN |
| Terminal Surface Treatment | SOLDER |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 95-00274-004 | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| ROM/PROM FAMILY 014 | Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) (USA) |
| 300004-6 | Lockheed Martin Sippican, Inc. Div Lockheed Martin Marion (USA) |
| MC2708/B | Intel Corp Sales Office (USA) |
| 95-00274-004 | Intel Corp Sales Office (USA) |
| AM2708DM-B | Advanced Micro Devices Inc Dba AMD Austin (USA) |
| 72-00622-107 | Raytheon Company (USA) |
| 95-00274-004 PRIMARY | Raytheon Company (USA) |
NSN 5962-01-071-5331 is a Microcircuit,memory, manufactured by Raytheon Company, classified under FSC 5962 (No Item Name Available). Status: active.
NSN 5962-01-071-5331 has 8 cross-referenced part numbers: 95-00274-004 (Advanced Micro Devices Inc Dba AMD Austin), ROM/PROM FAMILY 014 (Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings)), 300004-6 (Lockheed Martin Sippican, Inc. Div Lockheed Martin Marion), MC2708/B (Intel Corp Sales Office), 95-00274-004 (Intel Corp Sales Office) and 3 more.
There are 5 known substitutes for 5962-01-071-5331: 5999-00-068-4329, 6650-00-276-7540, 2920-00-870-7354 and 2 more. Verify interchangeability with system specifications before substitution.
Key specifications for 95-00274-004: Storage Temp Range: -65.0 TO 125.0 CELSIUS DEGC; Features Provided: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND 3-STATE OUTPUT; Memory Device Type: ROM; Body Width: 0.500 INCHES MINIMUM AND 0.600 INCHES MAXIMUM IN. 17 total characteristics are documented in the Federal Logistics Information System.