The Semiconductor Device,diode, cataloged under National Stock Number 5961-01-357-8135, is classified within Federal Supply Class 5961 (Semiconductor Devices and Associated Hardware) of the Electrical and Electronic Equipment Components group. The manufacturer of record is Microsemi Corp - Massachusetts. Government technical data includes 13 specifications, cited from the U.S. Government catalog. The record lists 1 manufacturer part number for this item, enabling identification through both NSN and commercial part number lookups. 8 additional reference documents (drawings, advisory and superseded references) are recorded in the U.S. Government catalog. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-01-357-8135 |
| Primary Part Number | JANTXV1N5907 |
| Item Name | Semiconductor Device,diode |
| FSC / FSG | 5961 / 59 — Semiconductor Devices and Associated Hardware |
| Manufacturer | Microsemi Corp - Massachusetts |
| Status | ACTIVE |
| Voltage Rating in Volts Per Characteristic | 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| Maximum Operating Temp Per Measurement Point | 175.0 CELSIUS AMBIENT AIR DEGC |
| Joint Electronic Device Engineering Council/jedec/case Outline Designation | DO-13 |
| Overall Diameter | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN |
| Terminal Length | 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM IN |
| Mounting Method | TERMINAL |
| Criticality Code Justification | FEAT |
| Current Rating Per Characteristic | 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, INSTANTANEOUS |
| Function for Which Designed | TRANSIENT SUPPRESSOR |
| Material | SILICON SEMICONDUCTOR |
| Material | GLASS OR CERAMIC ENCLOSURE |
| Terminal Type and Quantity | 2 UNINSULATED WIRE LEAD |
| Power Rating Per Characteristic | 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC |
| Acquisition Status | ACTIVE |
| DEMIL Code | DEMIL A — No Demilitarization Required |
| Hazard | No hazard code in the DLA record (HMIC N) |
| Criticality Code | Y |
| Part Number | Manufacturer |
|---|---|
| JANTXV1N5907 PRIMARY | Microsemi Corp - Massachusetts (USA) |
| Reference | Meaning |
|---|---|
| M309-611 | 5/9 Secondary reference Microsemi Corporation |
| 7555309P611 | 5/9 Secondary reference U.S. Government activity |
| JANTXV1N5907 | 5/9 Secondary reference Microsemi Corp.-Scottsdale Dba Microsemi |
| JANTXV1N5907 | 5/9 Secondary reference General Semiconductor Industries Inc |
| NH7555309P611 | 5/1 Secondary reference Dla Land and Maritime Dba Engineering and Technical Support Div Document Standardization Division (vendor Item Drawings) |
| 7555309P0611 | 3/9 Design control — primary reference U.S. Government activity |
| DZ880826A | 5/9 Secondary reference Microsemi Corp.-Scottsdale Dba Microsemi |
| G309-611 | 5/9 Secondary reference General Semiconductor Industries Inc |
NSN 5961-01-357-8135 is a Semiconductor Device,diode, manufactured by Microsemi Corp - Massachusetts, classified under FSC 5961, Semiconductor Devices and Associated Hardware. Status: active.
NSN 5961-01-357-8135 has 1 manufacturer part number on file: JANTXV1N5907 (Microsemi Corp - Massachusetts).
Key specifications for JANTXV1N5907: Voltage Rating in Volts Per Characteristic: 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE; Maximum Operating Temp Per Measurement Point: 175.0 CELSIUS AMBIENT AIR DEGC; Joint Electronic Device Engineering Council/jedec/case Outline Designation: DO-13; Overall Diameter: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN. 13 specifications are documented in the U.S. Government catalog.
No hazard code in the DLA record (HMIC N). Hazard information on this page is shown exactly as it appears in the DLA record.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-16.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.