The Semiconductor Device,diode, cataloged under National Stock Number 5961-01-353-5528, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp. Government technical data includes 11 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 6 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 1 verified substitute exists in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-01-353-5528 |
| Primary Part Number | 932170-1 |
| Item Name | Semiconductor Device,diode |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp |
| Status | ACTIVE |
| Terminal Type and Quantity | 2 UNINSULATED WIRE LEAD |
| Material | GLASS OR PLASTIC ENCLOSURE |
| Material | SILICON SEMICONDUCTOR |
| Power Rating Per Characteristic | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| Voltage Rating in Volts Per Characteristic | 6.29 MINIMUM REGULATOR VOLTAGE AND 6.41 MAXIMUM REGULATOR VOLTAGE |
| Maximum Operating Temp Per Measurement Point | 175.0 CELSIUS JUNCTION DEGC |
| Terminal Length | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN |
| Mounting Method | TERMINAL |
| Current Rating Per Characteristic | 70.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT |
| Overall Diameter | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| Function for Which Designed | VOLTAGE REFERENCE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| JANTX1N821-1 | Microsemi Corp.-Scottsdale Dba Microsemi (USA) |
| JANTX1N821-1 | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| JANTX1N821-1 | Compensated Devices Inc (USA) |
| MIL-PRF-19500/159 | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 932170-1 PRIMARY | Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp (USA) |
| JANTX1N821-1 | American Power Devices Inc (USA) |
NSN 5961-01-353-5528 is a Semiconductor Device,diode, manufactured by Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-01-353-5528 has 6 cross-referenced part numbers: JANTX1N821-1 (Microsemi Corp.-Scottsdale Dba Microsemi), JANTX1N821-1 (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), JANTX1N821-1 (Compensated Devices Inc), MIL-PRF-19500/159 (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 932170-1 (Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp) and 1 more.
There is 1 known substitute for 5961-01-353-5528: 5961-01-112-7347. Verify interchangeability with system specifications before substitution.
Key specifications for 932170-1: Terminal Type and Quantity: 2 UNINSULATED WIRE LEAD; Material: GLASS OR PLASTIC ENCLOSURE; Material: SILICON SEMICONDUCTOR; Power Rating Per Characteristic: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION. 12 total characteristics are documented in the Federal Logistics Information System.