The Transistor, cataloged under National Stock Number 5961-01-326-0619, is classified within Federal Supply Class 5961 (Semiconductor Devices and Associated Hardware) of the Electrical and Electronic Equipment Components group. The manufacturer of record is Raytheon Company. Government technical data includes 16 specifications, cited from the U.S. Government catalog. The record lists 1 manufacturer part number for this item, enabling identification through both NSN and commercial part number lookups. 1 additional reference document (drawings, advisory and superseded references) is recorded in the U.S. Government catalog. 1 item shares a part number with this NSN in the catalog (possible match — not a government interchangeability claim). Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-01-326-0619 |
| Primary Part Number | 20-01111-001 |
| Item Name | Transistor |
| FSC / FSG | 5961 / 59 — Semiconductor Devices and Associated Hardware |
| Manufacturer | Raytheon Company |
| Status | ACTIVE |
| Voltage Rating in Volts Per Characteristic | 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| Maximum Operating Temp Per Measurement Point | 200.0 CELSIUS JUNCTION DEGC |
| Overall Diameter | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN |
| Precious Material | GOLD |
| Terminal Length | 0.500 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN |
| Mounting Method | TERMINAL |
| Internal Junction Configuration | NPN |
| Semiconductor Material | SILICON |
| Internal Configuration | JUNCTION CONTACT |
| Current Rating Per Characteristic | 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| Function for Which Designed | MICROWAVE |
| Precious Material and Location | DIE METALLIZATION, EMITTER AND BASE LEADS, OTHER L GOLD |
| Test Data Document | 00724-20-01111 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| Terminal Type and Quantity | 4 UNINSULATED WIRE LEAD |
| Terminal Circle Diameter | 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN |
| Power Rating Per Characteristic | 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| Acquisition Status | ACTIVE |
| DEMIL Code | DEMIL A — No Demilitarization Required |
| Hazard | No hazard code in the DLA record (HMIC N) |
| Criticality Code | X |
| Part Number | Manufacturer |
|---|---|
| 20-01111-001 PRIMARY | Raytheon Company (USA) |
| Reference | Meaning |
|---|---|
| MA42327 | 5/9 Secondary reference U.S. Government activity |
NSN 5961-01-326-0619 is a Transistor, manufactured by Raytheon Company, classified under FSC 5961, Semiconductor Devices and Associated Hardware. Status: active.
NSN 5961-01-326-0619 has 1 manufacturer part number on file: 20-01111-001 (Raytheon Company).
1 possible match (shared part number, not a government interchangeability claim): 3010-01-394-8301. Verify interchangeability with system specifications before substitution.
Key specifications for 20-01111-001: Voltage Rating in Volts Per Characteristic: 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN; Maximum Operating Temp Per Measurement Point: 200.0 CELSIUS JUNCTION DEGC; Overall Diameter: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN; Precious Material: GOLD. 16 specifications are documented in the U.S. Government catalog.
No hazard code in the DLA record (HMIC N). Hazard information on this page is shown exactly as it appears in the DLA record.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-16.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.