The Semiconductor Device,diode, cataloged under National Stock Number 5961-01-245-4856, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Microwave Device Technology Corporation Dba Mdt. Government technical data includes 13 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 6 commercial cross-references from 5 manufacturers, enabling identification through both NSN and commercial part number lookups. 4 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-01-245-4856 |
| Primary Part Number | MG1201 |
| Item Name | Semiconductor Device,diode |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Microwave Device Technology Corporation Dba Mdt |
| Status | ACTIVE |
| Test Data Document | 82577-925194 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| Terminal Type and Quantity | 2 CASE |
| Precious Material and Location | TERMINALS PLATED GOLD |
| Material | SILICON SEMICONDUCTOR |
| Thread Series Designator | UNIFIED NATIONAL COARSE (UNC) |
| Mounting Facility Quantity | 1 |
| Power Rating Per Characteristic | 250.0 MILLIWATTS MINIMUM POWER OUTPUT |
| Maximum Operating Temp Per Measurement Point | 71.0 CELSIUS CASE DEGC |
| Nominal Thread Size | 0.099 INCHES IN |
| Function for Which Designed | GUNN DIODE |
| Mounting Method | THREADED STUD(S) |
| Voltage Rating in Volts Per Characteristic | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC |
| Overall Diameter | 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM IN |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 49601 | Cobham Advanced Electronic Solutions Inc. (USA) |
| VSX9201JZ | Microwave Power Products, Inc. Div Microwave Power Products Division (USA) |
| VSX9201JZ | Communications & Power Industries International Inc. Zweigniederlassung Ismaning (DEU) |
| MG1201 PRIMARY | Microwave Device Technology Corporation Dba Mdt (USA) |
| MA49601 | Cobham Advanced Electronic Solutions Inc. (USA) |
| 925194-1B | Raytheon Company Dba Raytheon (USA) |
NSN 5961-01-245-4856 is a Semiconductor Device,diode, manufactured by Microwave Device Technology Corporation Dba Mdt, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-01-245-4856 has 6 cross-referenced part numbers: 49601 (Cobham Advanced Electronic Solutions Inc.), VSX9201JZ (Microwave Power Products, Inc. Div Microwave Power Products Division), VSX9201JZ (Communications & Power Industries International Inc. Zweigniederlassung Ismaning), MG1201 (Microwave Device Technology Corporation Dba Mdt), MA49601 (Cobham Advanced Electronic Solutions Inc.) and 1 more.
There are 4 known substitutes for 5961-01-245-4856: 4820-00-115-3806, 2825-00-388-6900, 4820-01-257-8819 and 1 more. Verify interchangeability with system specifications before substitution.
Key specifications for MG1201: Test Data Document: 82577-925194 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING); Terminal Type and Quantity: 2 CASE; Precious Material and Location: TERMINALS PLATED GOLD; Material: SILICON SEMICONDUCTOR. 15 total characteristics are documented in the Federal Logistics Information System.