The Transistor, cataloged under National Stock Number 5961-01-043-4773, is classified within Federal Supply Class 5961 (Semiconductor Devices and Associated Hardware) of the Electrical and Electronic Equipment Components group. The manufacturer of record is Osi Optoelectronics, Inc Dba Semicoa. Government technical data includes 13 specifications, cited from the U.S. Government catalog. The record lists 2 manufacturer part numbers for this item, enabling identification through both NSN and commercial part number lookups. 5 additional reference documents (drawings, advisory and superseded references) are recorded in the U.S. Government catalog. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-01-043-4773 |
| Primary Part Number | 2N6232 |
| Item Name | Transistor |
| FSC / FSG | 5961 / 59 — Semiconductor Devices and Associated Hardware |
| Manufacturer | Osi Optoelectronics, Inc Dba Semicoa |
| Status | ACTIVE |
| Voltage Rating in Volts Per Characteristic | 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| Maximum Operating Temp Per Measurement Point | 200.0 CELSIUS JUNCTION DEGC |
| Overall Diameter | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| Terminal Length | 1.500 INCHES MINIMUM IN |
| Mounting Method | TERMINAL |
| Semiconductor Material | SILICON |
| Internal Configuration | JUNCTION CONTACT |
| Features Provided | HERMETICALLY SEALED CASE |
| Current Rating Per Characteristic | 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| Terminal Type and Quantity | 3 UNINSULATED WIRE LEAD |
| Terminal Circle Diameter | 0.200 INCHES NOMINAL IN |
| Electrode Internally-Electrically Connected to Case | COLLECTOR |
| Power Rating Per Characteristic | 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| Acquisition Status | ACTIVE |
| DEMIL Code | DEMIL A — No Demilitarization Required |
| Hazard | No hazard code in the DLA record (HMIC N) |
| Criticality Code | X |
| Part Number | Manufacturer |
|---|---|
| 2N6232 | Microsemi Corp - Massachusetts (USA) |
| 2N6232 PRIMARY | Osi Optoelectronics, Inc Dba Semicoa (USA) |
| Reference | Meaning |
|---|---|
| 2N6232 | 5/9 Secondary reference U.S. Government activity |
| 2N6232 | 5/9 Secondary reference Micro Uspd Inc |
| 2N6232 | 5/9 Secondary reference General Semiconductor Industries Inc |
| VB2025 | C/1 Advisory reference — outside the item-of-supply concept Micro Uspd Inc |
| RELEASE 6835 | 5/9 Secondary reference U.S. Government activity |
NSN 5961-01-043-4773 is a Transistor, manufactured by Osi Optoelectronics, Inc Dba Semicoa, classified under FSC 5961, Semiconductor Devices and Associated Hardware. Status: active.
NSN 5961-01-043-4773 has 2 manufacturer part numbers on file: 2N6232 (Microsemi Corp - Massachusetts), 2N6232 (Osi Optoelectronics, Inc Dba Semicoa).
Key specifications for 2N6232: Voltage Rating in Volts Per Characteristic: 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN; Maximum Operating Temp Per Measurement Point: 200.0 CELSIUS JUNCTION DEGC; Overall Diameter: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN; Terminal Length: 1.500 INCHES MINIMUM IN. 13 specifications are documented in the U.S. Government catalog.
No hazard code in the DLA record (HMIC N). Hazard information on this page is shown exactly as it appears in the DLA record.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-16.
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.