The Semiconductor Device,diode, cataloged under National Stock Number 5961-01-035-7499, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Northrop Grumman Systems Corporation. Government technical data includes 11 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 2 manufacturers, enabling identification through both NSN and commercial part number lookups. 3 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-01-035-7499 |
| Primary Part Number | GS810HV1 |
| Item Name | Semiconductor Device,diode |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Northrop Grumman Systems Corporation |
| Status | ACTIVE |
| Material | SILICON SEMICONDUCTOR |
| Material | GLASS ENCLOSURE |
| Overall Diameter | 0.124 INCHES NOMINAL IN |
| Power Rating Per Characteristic | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| Features Provided | HERMETICALLY SEALED CASE |
| Terminal Length | 1.000 INCHES MINIMUM IN |
| Current Rating Per Characteristic | 50.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT |
| Voltage Rating in Volts Per Characteristic | 1.8 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| Maximum Operating Temp Per Measurement Point | 200.0 CELSIUS AMBIENT AIR DEGC |
| Mounting Method | TERMINAL |
| Terminal Type and Quantity | 2 UNINSULATED WIRE LEAD |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
NSN 5961-01-035-7499 is a Semiconductor Device,diode, manufactured by Northrop Grumman Systems Corporation, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-01-035-7499 has 3 cross-referenced part numbers: D1N4678-1 (Microsemi Corp.-Scottsdale Dba Microsemi), GS810HV1 (Northrop Grumman Systems Corporation), 1N467 (Microsemi Corp.-Scottsdale Dba Microsemi).
There are 3 known substitutes for 5961-01-035-7499: 5961-00-617-3179, 5961-00-669-6835, 5961-00-686-8388. Verify interchangeability with system specifications before substitution.
Key specifications for GS810HV1: Material: SILICON SEMICONDUCTOR; Material: GLASS ENCLOSURE; Overall Diameter: 0.124 INCHES NOMINAL IN; Power Rating Per Characteristic: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION. 12 total characteristics are documented in the Federal Logistics Information System.