The Semiconductor Device,thyristor, cataloged under National Stock Number 5961-01-024-3757, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Ge Aviation Systems Llc Dba Ge Aviation Systems Llc. Government technical data includes 14 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 9 commercial cross-references from 8 manufacturers, enabling identification through both NSN and commercial part number lookups. 10 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-01-024-3757 |
| Primary Part Number | 2N3655 |
| Item Name | Semiconductor Device,thyristor |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Ge Aviation Systems Llc Dba Ge Aviation Systems Llc |
| Status | ACTIVE |
| Features Provided | HERMETICALLY SEALED CASE |
| Semiconductor Material | SILICON |
| Voltage Rating in Volts Per Characteristic | 100.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| Electrode Internally-Electrically Connected to Case | ANODE |
| Mounting Facility Quantity | 1 |
| Maximum Operating Temp Per Measurement Point | 120.0 CELSIUS JUNCTION DEGC |
| Nominal Thread Size | 0.250 INCHES IN |
| Current Rating Per Characteristic | 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| Specification/standard Data | 80131-RELEASE4957 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Power Rating Per Characteristic | 1.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| Thread Series Designator | UNF |
| Terminal Type and Quantity | 1 THREADED STUD AND 2 TAB, SOLDER LUG |
| Overall Width Across Flats | 0.562 INCHES MAXIMUM IN |
| Mounting Method | THREADED STUD(S) |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 2N3655 | Ge Aviation Systems Llc Dba Ge Aviation Systems Llc (USA) |
| 2N3655 | Semitronics Corp (USA) |
| 5214-7 | Raytheon Company Div Rmd Strategic (USA) |
| RELEASE4957 | Electronic Industries Association |
| 2N3655 | Solid State Devices, Inc (USA) |
| 5961PL0801972 | Jednolity Indeks Materialowy - Uniform Material Index (POL) |
| 2N3655 | General Electric Co Semi-Conductor Products Dept Power Components Opn (USA) |
| 2N3655 | Electronic Industries Association |
| 2N3655 | Powerex, Inc. (USA) |
NSN 5961-01-024-3757 is a Semiconductor Device,thyristor, manufactured by Ge Aviation Systems Llc Dba Ge Aviation Systems Llc, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-01-024-3757 has 9 cross-referenced part numbers: 2N3655 (Ge Aviation Systems Llc Dba Ge Aviation Systems Llc), 2N3655 (Semitronics Corp), 5214-7 (Raytheon Company Div Rmd Strategic), RELEASE4957 (Electronic Industries Association), 2N3655 (Solid State Devices, Inc) and 4 more.
There are 10 known substitutes for 5961-01-024-3757: 5961-00-497-0975, 5355-00-771-3886, 2815-00-792-8249 and 7 more. Verify interchangeability with system specifications before substitution.
Key specifications for 2N3655: Features Provided: HERMETICALLY SEALED CASE; Semiconductor Material: SILICON; Voltage Rating in Volts Per Characteristic: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC; Electrode Internally-Electrically Connected to Case: ANODE. 15 total characteristics are documented in the Federal Logistics Information System.