The Semiconductor Device,thyristor, cataloged under National Stock Number 5961-00-951-8760, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Div Rmd Strategic. Government technical data includes 14 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 7 commercial cross-references from 6 manufacturers, enabling identification through both NSN and commercial part number lookups. 2 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Cancelled.
| Parameter | Value |
|---|---|
| NSN | 5961-00-951-8760 |
| Primary Part Number | 720699-116 |
| Item Name | Semiconductor Device,thyristor |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Div Rmd Strategic |
| Status | CANCELLED |
| Mounting Method | TERMINAL |
| Voltage Rating in Volts Per Characteristic | 2.2 MAXIMUM FORWARD VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 200.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| Semiconductor Material | SILICON |
| Terminal Circle Diameter | 0.200 INCHES NOMINAL IN |
| Internal Configuration | JUNCTION CONTACT |
| Current Rating Per Characteristic | 350.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 220.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE |
| Terminal Length | 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM IN |
| Overall Diameter | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| Electrode Internally-Electrically Connected to Case | COLLECTOR |
| Maximum Operating Temp Per Measurement Point | 125.0 CELSIUS AMBIENT AIR DEGC |
| Specification/standard Data | 81349-MIL-S-19500/276 GOVERNMENT SPECIFICATION |
| Features Provided | HERMETICALLY SEALED CASE |
| Test Data Document | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| Terminal Type and Quantity | 3 UNINSULATED WIRE LEAD |
| Acquisition Status | CANCELLED |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 720699-116 | Raytheon Company Div Rmd Strategic (USA) |
| 5961PL1297080 | Jednolity Indeks Materialowy - Uniform Material Index (POL) |
| MILS19500-276 | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 720699-116 | Raytheon Company Dba Raytheon (USA) |
| 2N2326 | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 2N2326 | General Electric Co Semi-Conductor Products Dept (USA) |
| 2N2326A | Adelco Elektronik Gmbh (DEU) |
NSN 5961-00-951-8760 is a Semiconductor Device,thyristor, manufactured by Raytheon Company Div Rmd Strategic, classified under FSC 5961 (No Item Name Available). Status: cancelled.
NSN 5961-00-951-8760 has 7 cross-referenced part numbers: 720699-116 (Raytheon Company Div Rmd Strategic), 5961PL1297080 (Jednolity Indeks Materialowy - Uniform Material Index), MILS19500-276 (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M), 720699-116 (Raytheon Company Dba Raytheon), 2N2326 (Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M) and 2 more.
There are 2 known substitutes for 5961-00-951-8760: 5961-00-159-6582, 5961-00-252-1066. Verify interchangeability with system specifications before substitution.
Key specifications for 720699-116: Mounting Method: TERMINAL; Voltage Rating in Volts Per Characteristic: 2.2 MAXIMUM FORWARD VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 200.0 MAXIMUM REVERSE VOLTAGE, PEAK; Semiconductor Material: SILICON; Special Features: JUNCTION PATTERN ARRANGEMENT: PNPN. 16 total characteristics are documented in the Federal Logistics Information System.
NSN 5961-00-951-8760 is currently cancelled. Check with the Defense Logistics Agency for current availability and authorized substitutes.