The Transistor, cataloged under National Stock Number 5961-00-855-3463, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc. Government technical data includes 13 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 13 commercial cross-references from 12 manufacturers, enabling identification through both NSN and commercial part number lookups. 1 verified substitute exists in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-00-855-3463 |
| Primary Part Number | 2N4072 |
| Item Name | Transistor |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc |
| Status | ACTIVE |
| Electrode Internally-Electrically Connected to Case | COLLECTOR |
| Current Rating Per Characteristic | 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| Power Rating Per Characteristic | 350.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| Semiconductor Material | SILICON |
| Terminal Length | 0.500 INCHES MINIMUM IN |
| Features Provided | HERMETICALLY SEALED CASE |
| Mounting Method | TERMINAL |
| Terminal Circle Diameter | 0.100 INCHES NOMINAL IN |
| Internal Configuration | JUNCTION CONTACT |
| Overall Diameter | 0.220 INCHES NOMINAL IN |
| Voltage Rating in Volts Per Characteristic | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| Terminal Type and Quantity | 3 UNINSULATED WIRE LEAD |
| Specification/standard Data | 80131-RELEASE5333 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 2N4072 | Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc (USA) |
| 2N4072 | Gilbert Engineering Co Inc/incon Sub of Transitron Electronic Corp (USA) |
| 2N4072 | Electronic Industries Association |
| 2N4072 | Telcom Semiconductor Inc (USA) |
| SMA618680-1 | Us Army Communications & Electronics Materiel Readiness Command Logistics Engineering Dir (USA) |
| RELEASE5333 | Electronic Industries Association |
| 019-005027 | Northrop Grumman Systems Corporation Dba Northrop Grumman Systems Corp Div Multiple (USA) |
| 2053712-0701 | Raytheon Company Dba Raytheon Co (USA) |
| 2N4072 | Solid State Devices, Inc (USA) |
| 2N4072 | Newark Electronics Corporation Dba Newark (USA) |
| 2N4072 | Freescale Semiconductor, Inc. (USA) |
| 2N4072 | Semitronics Corp (USA) |
| 2N4072 | Osi Optoelectronics, Inc Dba Semicoa (USA) |
NSN 5961-00-855-3463 is a Transistor, manufactured by Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-00-855-3463 has 13 cross-referenced part numbers: 2N4072 (Advanced Semiconductor,inc. Dba Advanced Semiconductor Inc), 2N4072 (Gilbert Engineering Co Inc/incon Sub of Transitron Electronic Corp), 2N4072 (Electronic Industries Association), 2N4072 (Telcom Semiconductor Inc), SMA618680-1 (Us Army Communications & Electronics Materiel Readiness Command Logistics Engineering Dir) and 8 more.
There is 1 known substitute for 5961-00-855-3463: 5961-00-356-5697. Verify interchangeability with system specifications before substitution.
Key specifications for 2N4072: Electrode Internally-Electrically Connected to Case: COLLECTOR; Current Rating Per Characteristic: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC; Power Rating Per Characteristic: 350.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION; Semiconductor Material: SILICON. 15 total characteristics are documented in the Federal Logistics Information System.