The Transistor, cataloged under National Stock Number 5961-00-735-1889, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Raytheon Company Dba Raytheon Co. Government technical data includes 13 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 11 commercial cross-references from 9 manufacturers, enabling identification through both NSN and commercial part number lookups. 6 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-00-735-1889 |
| Primary Part Number | 2N2368 |
| Item Name | Transistor |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Raytheon Company Dba Raytheon Co |
| Status | ACTIVE |
| Voltage Rating in Volts Per Characteristic | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| Terminal Circle Diameter | 0.100 INCHES NOMINAL IN |
| Current Rating Per Characteristic | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| Semiconductor Material | SILICON |
| Maximum Operating Temp Per Measurement Point | 200.0 CELSIUS JUNCTION DEGC |
| Overall Diameter | 0.230 INCHES MAXIMUM IN |
| Specification/standard Data | 80131-RELEASE3935 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Internal Configuration | JUNCTION CONTACT |
| Terminal Length | 0.500 INCHES MINIMUM IN |
| Mounting Method | TERMINAL |
| Features Provided | HERMETICALLY SEALED CASE |
| Power Rating Per Characteristic | 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| Terminal Type and Quantity | 3 UNINSULATED WIRE LEAD |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 2N2368 | Raytheon Company Dba Raytheon Co (USA) |
| 2N2368 | Raytheon Company Div Corp (USA) |
| 2N2368 | Raytheon Company (USA) |
| 2N2368 | Electronic Industries Association |
| RELEASE3935 | Electronic Industries Association |
| 2N2368 | Lacon Electronic Gmbh (DEU) |
| 2N2368 | Freescale Semiconductor, Inc. (USA) |
| 2N2368A | Adelco Elektronik Gmbh (DEU) |
| 2N2368 | Adelco Elektronik Gmbh (DEU) |
| 2N2368 | Newark Electronics Corporation Dba Newark (USA) |
| 12792-1 | Kaiser Aerospace and Electronics Corp Phoenix Electronics Plant (USA) |
NSN 5961-00-735-1889 is a Transistor, manufactured by Raytheon Company Dba Raytheon Co, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-00-735-1889 has 11 cross-referenced part numbers: 2N2368 (Raytheon Company Dba Raytheon Co), 2N2368 (Raytheon Company Div Corp), 2N2368 (Raytheon Company), 2N2368 (Electronic Industries Association), RELEASE3935 (Electronic Industries Association) and 6 more.
There are 6 known substitutes for 5961-00-735-1889: 5331-00-498-5806, 5360-00-619-0285, 5961-00-919-4566 and 3 more. Verify interchangeability with system specifications before substitution.
Key specifications for 2N2368: Voltage Rating in Volts Per Characteristic: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN; Terminal Circle Diameter: 0.100 INCHES NOMINAL IN; Current Rating Per Characteristic: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC; Semiconductor Material: SILICON. 15 total characteristics are documented in the Federal Logistics Information System.