The Transistor, cataloged under National Stock Number 5961-00-729-2786, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Semiconductor Technology, Inc. Dba Semiconductor Technology Inc. Government technical data includes 13 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 10 commercial cross-references from 9 manufacturers, enabling identification through both NSN and commercial part number lookups. 4 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-00-729-2786 |
| Primary Part Number | 2N656A |
| Item Name | Transistor |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Semiconductor Technology, Inc. Dba Semiconductor Technology Inc |
| Status | ACTIVE |
| Terminal Type and Quantity | 3 UNINSULATED WIRE LEAD |
| Specification/standard Data | 80131-RELEASE3021 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Voltage Rating in Volts Per Characteristic | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| Overall Diameter | 0.370 INCHES MAXIMUM IN |
| Mounting Method | TERMINAL |
| Terminal Circle Diameter | 0.200 INCHES NOMINAL IN |
| Terminal Length | 1.500 INCHES MINIMUM IN |
| Semiconductor Material | SILICON |
| Internal Configuration | JUNCTION CONTACT |
| Electrode Internally-Electrically Connected to Case | COLLECTOR |
| Features Provided | HERMETICALLY SEALED CASE |
| Maximum Operating Temp Per Measurement Point | 200.0 CELSIUS JUNCTION DEGC |
| Power Rating Per Characteristic | 4.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 2N656A | Bae Systems Information and Electronic Systems Integration I (USA) |
| 2N656A | Martin Marietta Corp Electronics Laboratory (USA) |
| 2N656A | Texas Instruments Incorporated (USA) |
| 2N656A PRIMARY | Semiconductor Technology, Inc. Dba Semiconductor Technology Inc (USA) |
| 1532887-3 | Allied Signal Inc Aerospace Equipment Systems Eatontown Site (USA) |
| RELEASE3021 | Electronic Industries Association |
| 2N656A | General Electric Co Semi-Conductor Products Dept (USA) |
| 2N656A | Electronic Industries Association |
| 2N656-A | Memec Ltd (GBR) |
| 2N656A | Gilbert Engineering Co Inc/incon Sub of Transitron Electronic Corp (USA) |
NSN 5961-00-729-2786 is a Transistor, manufactured by Semiconductor Technology, Inc. Dba Semiconductor Technology Inc, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-00-729-2786 has 10 cross-referenced part numbers: 2N656A (Bae Systems Information and Electronic Systems Integration I), 2N656A (Martin Marietta Corp Electronics Laboratory), 2N656A (Texas Instruments Incorporated), 2N656A (Semiconductor Technology, Inc. Dba Semiconductor Technology Inc), 1532887-3 (Allied Signal Inc Aerospace Equipment Systems Eatontown Site) and 5 more.
There are 4 known substitutes for 5961-00-729-2786: 5961-00-043-1335, 5961-00-087-1078, 5961-00-724-6904 and 1 more. Verify interchangeability with system specifications before substitution.
Key specifications for 2N656A: Terminal Type and Quantity: 3 UNINSULATED WIRE LEAD; Specification/standard Data: 80131-RELEASE3021 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION; Special Features: JUNCTION PATTERN ARRANGEMENT: NPN; Voltage Rating in Volts Per Characteristic: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN. 15 total characteristics are documented in the Federal Logistics Information System.